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hexfet power mosfet so-8 s1 g1 4 3 s2 1 g2 2 d1 d1 5 6 d2 8 d2 7 absolute maximum ratings parameter q1 max. q2 max. units v ds drain-to-source voltage v v gs gate-to-source voltage i d @ t a = 25c continuous drain current, v gs @ 10v 9.1 11 i d @ t a = 70c continuous drain current, v gs @ 10v 7.3 8.8 a i dm pulsed drain current 76 85 p d @t a = 25c power dissipation 2.0 2.0 w p d @t a = 70c power dissipation 1.3 1.3 linear derating factor 0.016 0.016 w/c t j operating junction and c t stg storage temperature range thermal resistance parameter q1 max. q2 max. units r jl junction-to-drain lead 42 42 c/w r ja junction-to-ambient 62.5 62.5 20 30 -55 to + 150
applications dual so-8 mosfet for pol converters in notebook computers, servers, graphics cards, game consoles and set-top box features benefits industry-standard pinout so-8 package ? multi-vendor compatibility compatible with existing surface mount techniques easier manufacturing rohs compliant, halogen-free environmentally friendlier msl1, industrial qualification increased reliability v ds 30 v r ds(on) max q1 (@v gs = 10v) 16.4 r ds(on) max q2 (@v gs = 10v) 11.8 q g (typical) q1 6.7 q g (typical) q2 14 i d ( @ta = 25c) q1 9.1 i d ( @ta = 25c) q2 11 m nc a

!" form quantity IRF7907PBF-1 so-8 tape and reel 4000 irf7907trpbf-1 package type standard pack orderable part number base part number notes through are on page 11.

!" static @ t j = 25c (unless otherwise specified) parameter min. typ. max. units bv dss drain-to-source breakdown voltage q1&q2 30 ??? ??? v ? / / ( ( ( / / a q1&q2 ??? ??? 150 i gss gate-to-source forward leakage q1&q2 ??? ??? 100 na gate-to-source reverse leakage q1&q2 ??? ??? -100 gfs forward transconductance q1 19 ??? ??? s q2 24 ??? ??? q g total gate charge q1 ??? 6.7 10 q2 ??? 14 21 q gs1 pre-vth gate-to-source charge q1 ??? 1.3 ??? q1 q2 ??? 3.0 ??? v ds = 15v q gs2 post-vth gate-to-source charge q1 ??? 0.7 ??? nc v gs = 4.5v, i d = 7.0a q2 ??? 1.3 ??? q gd gate-to-drain charge q1 ??? 2.5 ??? q2 q2 ??? 4.9 ??? v ds = 15v q godr gate charge overdrive q1 ??? 2.2 ??? v gs = 4.5v, i d = 8.8a q2 ??? 4.8 ??? q sw switch charge (q gs2 + q gd ) q1 ??? 3.2 ??? q2 ??? 6.2 ??? q oss output charge q1 ??? 4.5 ??? nc q2 ??? 9.0 ??? r g gate resistance q1 ??? 2.6 4.7 ( ( avalanche characteristics parameter q1 max. q2 max. units e as single pulse avalanche energy 10 15 mj i ar avalanche current 7.0 8.8 a diode characteristics parameter min. typ. max. units i s continuous source current q1 ??? ??? 2.8 a (body diode) q2 ??? ??? 2.8 i sm pulsed source current q1 ??? ??? 76 a (body diode) q2 ??? ??? 85 v sd diode forward voltage q1 ??? ??? 1.0 v q2 ??? ??? 1.0 t rr reverse recovery time q1 ??? 12 18 ns q2 ??? 16 24 q rr reverse recovery charge q1 ??? 4.1 6.1 nc q2 ??? 5.9 8.9 conditions v gs = 0v, i d = 250 a reference to 25c, i d = 1ma v gs = 10v, i d = 9.1a mosfet symbol q2: v ds = v gs , i d = 50 a v ds = 16v, v gs = 0v q1 v gs = 20v v gs = -20v v ds = 24v, v gs = 0v conditions q2 q1 t j = 25c, i f = 7.0a, v dd = 15v, di/dt = 100a/ s t j = 25c, i s = 7.3a, v gs = 0v showing the integral reverse p-n junction diode. t j = 25c, i s = 8.8a, v gs = 0v q2 t j = 25c, i f = 8.8a, v dd = 15v, di/dt = 100a/ s v dd = 15v, v gs = 4.5v ??? v ds = 15v clamped inductive load v gs = 0v ? = 1.0mhz typ. ??? v gs = 4.5v, i d = 7.3a v gs = 4.5v, i d = 8.8a v ds = 15v, i d = 8.8a v dd = 15v, v gs = 4.5v v gs = 10v, i d = 11a q1: v ds = v gs , i d = 25 a v ds = 15v, i d = 7.0a v ds = 24v, v gs = 0v, t j = 125c
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fig 2. typical output characteristics fig 1. typical output characteristics q1 - control fet q2 - synchronous fet typical characteristics fig 3. typical output characteristics fig 4. typical output characteristics fig 5. typical transfer characteristics fig 6. typical transfer characteristics 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.01 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 60 s pulse width tj = 25c 2.3v vgs top 10v 5.0v 4.5v 3.5v 3.0v 2.7v 2.5v bottom 2.3v 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 60 s pulse width tj = 150c 2.3v vgs top 10v 5.0v 4.5v 3.5v 3.0v 2.7v 2.5v bottom 2.3v 1.0 2.0 3.0 4.0 5.0 v gs , gate-to-source voltage (v) 0.1 1.0 10.0 100.0 i d , d r a i n - t o - s o u r c e c u r r e n t ( ) v ds = 15v 60 s pulse width t j = 25c t j = 150c 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.01 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 60 s pulse width tj = 25c 2.3v vgs top 10v 5.0v 4.5v 3.5v 3.0v 2.7v 2.5v bottom 2.3v 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 60 s pulse width tj = 150c 2.3v vgs top 10v 5.0v 4.5v 3.5v 3.0v 2.7v 2.5v bottom 2.3v 1.0 2.0 3.0 4.0 5.0 v gs , gate-to-source voltage (v) 0.1 1.0 10.0 100.0 i d , d r a i n - t o - s o u r c e c u r r e n t ( ) v ds = 15v 60 s pulse width t j = 25c t j = 150c

!" q1 - control fet q2 - synchronous fet typical characteristics fig 7. typical capacitance vs. drain-to-source voltage fig 8. typical capacitance vs. drain-to-source voltage fig 9. typical gate charge vs. gate-to-source voltage fig 10. typical gate charge vs. gate-to-source voltage fig 11. maximum safe operating area fig 12. maximum safe operating area 1 10 100 v ds , drain-to-source voltage (v) 10 100 1000 10000 c , c a p a c i t a n c e ( p f ) coss crss ciss v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd 0 4 8 12 16 q g total gate charge (nc) 0 2 4 6 8 10 12 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 24v vds= 15v vds= 6.0v i d = 7.0a 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.01 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t a = 25c tj = 150c single pulse 1msec 10msec operation in this area limited by r ds (on) 100 sec 100msec 1 10 100 v ds , drain-to-source voltage (v) 100 1000 10000 c , c a p a c i t a n c e ( p f ) coss crss ciss v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.01 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t a = 25c tj = 150c single pulse 1msec 10msec operation in this area limited by r ds (on) 100 sec 100msec 0 5 10 15 20 25 30 q g total gate charge (nc) 0 2 4 6 8 10 12 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 24v vds= 15v vds= 6.0v i d = 8.8a
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fig 17. typical on-resistance vs.gate voltage q1 - control fet q2 - synchronous fet typical characteristics fig 13. normalized on-resistance vs. temperature fig 14. normalized on-resistance vs. temperature fig 15. typical source-drain diode forward voltage fig 16. typical source-drain diode forward voltage fig 18. typical on-resistance vs.gate voltage 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 v sd , source-to-drain voltage (v) 0.1 1.0 10.0 100.0 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 150c v gs = 0v 2 4 6 8 10 v gs , gate-to-source voltage (v) 10 20 30 40 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ) t j = 25c t j = 125c i d = 8.8a -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.5 1.0 1.5 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 11a v gs = 10v 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 v sd , source-to-drain voltage (v) 0.1 1.0 10.0 100.0 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 150c v gs = 0v 2 4 6 8 10 v gs , gate-to-source voltage (v) 0 10 20 30 40 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ) t j = 25c t j = 125c i d = 11a -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.5 1.0 1.5 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 9.1a v gs = 10v

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!" q1 - control fet q2 - synchronous fet typical characteristics fig 19. maximum drain current vs. ambient temp. fig 20. maximum drain current vs. ambient temp. fig 21. threshold voltage vs. temperature fig 22. threshold voltage vs. temperature fig 23. maximum avalanche energy vs. drain current fig 24. maximum avalanche energy vs. drain current -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 1.0 1.2 1.4 1.6 1.8 2.0 2.2 v g s ( t h , g a t e t h r e s h o l d v o l t a g e ( v ) i d = 250 a 25 50 75 100 125 150 starting t j , junction temperature (c) 0 10 20 30 40 50 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 3.0a 3.5a bottom 7.0a 25 50 75 100 125 150 t j , ambient temperature (c) 0 2 4 6 8 10 12 i d , d r a i n c u r r e n t ( a ) -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 1.0 1.2 1.4 1.6 1.8 2.0 2.2 v g s ( t h , g a t e t h r e s h o l d v o l t a g e ( v ) i d = 250 a 25 50 75 100 125 150 starting t j , junction temperature (c) 0 10 20 30 40 50 60 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 3.8a 4.4a bottom 8.8a 25 50 75 100 125 150 t j , ambient temperature (c) 0 2 4 6 8 10 i d , d r a i n c u r r e n t ( a )
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fig 25. maximum effective transient thermal impedance, junction-to-ambient (q1) fig 26. maximum effective transient thermal impedance, junction-to-ambient (q2) fig 27. layout diagram l c o c in d1 d1 d2 d2 s1 g1 s2 g2 5 6 7 8 4 3 2 1 v in v o gnd 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 10 100 t 1 , rectangular pulse duration (sec) 0.01 0.1 1 10 100 t h e r m a l r e s p o n s e ( z t h j a ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthja + ta ri (c/w) ? ( j j 1 1 2 2 3 3 r 1 r 1 r 2 r 2 r 3 r 3 ci i / / a 4 4 r 4 r 4 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 10 100 t 1 , rectangular pulse duration (sec) 0.01 0.1 1 10 100 t h e r m a l r e s p o n s e ( z t h j a ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthja + ta ri (c/w) ? ( j j 1 1 2 2 3 3 r 1 r 1 r 2 r 2 r 3 r 3 ci i / i / ri a 4 4 r 4 r 4

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!" fig 30a. switching time test circuit fig 30b. switching time waveforms v gs v ds 90% 10% t d(on) t d(off) t r t f fig 29b. unclamped inductive waveforms fig 29a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 t p d.u.t l v ds + - v dd driver a 15v 20v v gs fig 31a. gate charge test circuit fig 31b. gate charge waveform vds vgs id vgs(th) qgs1 qgs2 qgd qgodr fig 28.

for n-channel hexfet power mosfets

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p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period
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%% ? "#""&# d.u.t. v ds i d i g -3ma v gs .3 f 50k .2 f 12v current regulator same type as d.u.t. current sampling resistors + - r g i as 0.01 t p d.u.t l v ds + - v dd driver a 15v 20v
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so-8 package outline (mosfet & fetky) e1 d e y b a a1 h k l .189 .1497 0 .013 .050 bas ic .0532 .0040 .2284 .0099 .016 .1968 .1574 8 .020 .0688 .0098 .2440 .0196 .050 4.80 3.80 0.33 1.35 0.10 5.80 0.25 0.40 0 1.27 bas ic 5.00 4.00 0.51 1.75 0.25 6.20 0.50 1.27 min max mi l l i me t e r s inches min max dim 8 e c .0075 .0098 0.19 0.25 .025 bas ic 0.635 bas ic 87 5 65 d b e a e 6x h 0.25 [.010] a 6 7 k x 45 8x l 8x c y 0.25 [.010] c a b e1 a a1 8x b c 0.10 [.004] 4 3 12 footprint 8x 0.72 [.028] 6.46 [.255] 3x 1.27 [.050] 8x 1.78 [ .070 ] 4 . ou t l i ne conf or ms t o j e de c ou t l i ne ms - 01 2 aa. not es : 1. dimens ioning & t ole rancing pe r as me y14.5m-1994. 2. controlling dimens ion: millimet er 3. di me ns i ons ar e s hown i n mi l l i me t e r s [i nch e s ]. 5 dimens ion doe s not include mold prot rus ions . 6 dimens ion doe s not include mold prot rus ions . mold prot rus ions not t o exceed 0.25 [.010]. 7 dimens ion is t he le ngt h of l ead f or s olde ring t o a s ubs t rate. mold prot rus ions not t o exceed 0.15 [.006]. dimensions are shown in milimeters (inches) so-8 part marking information p = disgnat es lead - free e xample : t his is an irf7101 (mos fe t ) f7101 xxxx international logo rectifier part number lot code product (optional) dat e code (yww) y = last digit of the year ww = we e k a = as s e mb l y s i t e code note: for the most current drawing please refer to ir website at: http://www.irf.com/package/

!" 330.00 (12.992) max. 14.40 ( .566 ) 12.40 ( .488 ) notes : 1. controlling dimension : millimeter. 2. outline conforms to eia-481 & eia-541. feed direction terminal number 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) notes: 1. controlling dimension : millimeter. 2. all dimensions are shown in millimeters(inches). 3. outline conforms to eia-481 & eia-541. so-8 tape and reel dimensions are shown in millimeters (inches) note: for the most current drawing please refer to ir website at: http://www.irf.com/package/

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repetitive rating; pulse width limited by max. junction temperature. starting t j = 25c, q1: l = 0.41mh, r g = 25 , i as = 7.0a; q2: l = 0.38mh, r g = 25 , i as = 8.8a. pulse width 400 s; duty cycle 2%. when mounted on 1 inch square copper board. ' ? qualification standards can be found at international rectifier?s web site: http://www.irf.com/product-info/reliability ?? applicable version of jedec standard at the time of product release ms l 1 (per je de c j-s td-020d ?? ) rohs c ompliant yes qualification information ? qualification level industrial (per jedec jes d47f ?? guidelines) moisture sensitivity level so-8 ir world headquarters: 101 n. sepulveda blvd., el segundo, california 90245, usa to contact international rectifier, please visit http://www.irf.com/whoto-call/ date comments ? corrected part number from" irf7907vpbf-1" to "irf7907vtrpbf-1" -all pages ? removed the "irf7907vpbf-1" bulk part number from ordering information on page1 revision history 10/16/2014

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